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USD 0.507
| SKU: | SI4447ADY-T1-GE3 |
| MPN: | SI4447ADY-T1-GE3 |
| Manufacturer: | VISHAY |
| Amount | Price |
|---|---|
| 1+ | USD 0.507 |
| 10+ | USD 0.426 |
| 25+ | USD 0.383 |
| 100+ | USD 0.354 |
| 250+ | USD 0.338 |
| 500+ | USD 0.304 |
| 1000+ | USD 0.283 |
| 2500+ | USD 0.273 |
| 5000+ | USD 0.264 |
USD
{"1":50700,"10":42600,"25":38300,"100":35400,"250":33800,"500":30400,"1000":28300,"2500":27300,"5000":26400}
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| Manufacturer | VISHAY |
| Type of transistor | P-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | -40V |
| Drain current | -7.2A |
| Pulsed drain current | -20A |
| Power dissipation | 4.2W |
| Case | SO8 |
| Gate-source voltage | ±20V |
| On-state resistance | 62mΩ |
| Mounting | SMD |
| Gate charge | 38nC |
| Kind of package | reel, tape |
| Kind of channel | enhanced |
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