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USD 0.352
| SKU: | SI1036X-T1-GE3 |
| MPN: | SI1036X-T1-GE3 |
| Manufacturer: | VISHAY |
| Amount | Price |
|---|---|
| 1+ | USD 0.352 |
| 10+ | USD 0.235 |
| 100+ | USD 0.127 |
| 1000+ | USD 0.098 |
| 3000+ | USD 0.091 |
| 9000+ | USD 0.086 |
| 15000+ | USD 0.081 |
| 21000+ | USD 0.080 |
| 24000+ | USD 0.079 |
| 30000+ | USD 0.078 |
USD
{"1":35200,"10":23500,"100":12700,"1000":9800,"3000":9100,"9000":8600,"15000":8100,"21000":8000,"24000":7900,"30000":7800}
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| Manufacturer | VISHAY |
| Type of transistor | N-MOSFET x2 |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 30V |
| Drain current | 610mA |
| Pulsed drain current | 2A |
| Power dissipation | 0.22W |
| Case | SC89, SOT563 |
| Gate-source voltage | ±8V |
| On-state resistance | 1.1Ω |
| Mounting | SMD |
| Gate charge | 2nC |
| Kind of package | reel, tape |
| Kind of channel | enhanced |
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