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USD 0.355
| SKU: | SI2356DS-T1-GE3 |
| MPN: | SI2356DS-T1-GE3 |
| Manufacturer: | VISHAY |
| Amount | Price |
|---|---|
| 1+ | USD 0.355 |
| 10+ | USD 0.260 |
| 25+ | USD 0.208 |
| 100+ | USD 0.146 |
| 250+ | USD 0.130 |
| 500+ | USD 0.115 |
| 1000+ | USD 0.105 |
| 3000+ | USD 0.100 |
| 9000+ | USD 0.097 |
USD
{"1":35500,"10":26000,"25":20800,"100":14600,"250":13000,"500":11500,"1000":10500,"3000":10000,"9000":9700}
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| Manufacturer | VISHAY |
| Type of transistor | N-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 40V |
| Drain current | 4.3A |
| Pulsed drain current | 20A |
| Power dissipation | 1.7W |
| Case | SOT23 |
| Gate-source voltage | ±12V |
| On-state resistance | 70mΩ |
| Mounting | SMD |
| Gate charge | 13nC |
| Kind of package | reel, tape |
| Kind of channel | enhanced |
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