The product you try to add is already in your cart. Do you want to increase its quantity or add another cart position?
USD 0.356
| SKU: | SI2356DS-T1-GE3 |
| MPN: | SI2356DS-T1-GE3 |
| Manufacturer: | VISHAY |
| Amount | Price |
|---|---|
| 1+ | USD 0.356 |
| 10+ | USD 0.261 |
| 25+ | USD 0.208 |
| 100+ | USD 0.147 |
| 250+ | USD 0.130 |
| 500+ | USD 0.116 |
| 1000+ | USD 0.105 |
| 3000+ | USD 0.100 |
| 9000+ | USD 0.098 |
USD
{"1":35600,"10":26100,"25":20800,"100":14700,"250":13000,"500":11600,"1000":10500,"3000":10000,"9000":9800}
You added SI2356DS-T1-GE3 to your shopping cart. Go to the cart
| Manufacturer | VISHAY |
| Type of transistor | N-MOSFET |
| Technology | TrenchFET® |
| Polarisation | unipolar |
| Drain-source voltage | 40V |
| Drain current | 4.3A |
| Pulsed drain current | 20A |
| Power dissipation | 1.7W |
| Case | SOT23 |
| Gate-source voltage | ±12V |
| On-state resistance | 70mΩ |
| Mounting | SMD |
| Gate charge | 13nC |
| Kind of package | reel, tape |
| Kind of channel | enhanced |
Enter the quantity of the product for which you want to check the warehouse delivery time.
Choose
Folder name
The minimum number of characters: 1. The maximum number of characters: 64.
The text has been copied to the clipboard (SI2356DS-T1-GE3)
Are you sure you want to perform this action?