State-of-the-art electronic equipment is currently designed with the use of increasingly miniaturised, but at the same time highly advanced and complex components. Manufacturers constantly strive to increase their number and density on PCBs, which results in more efficient and advanced, high-density solutions. Moreover, we have been witnessing a steady increase in the number of 3.3 V or 5 V digital circuits. However, one of serious challenges faced by designers of such equipment consists in protecting circuits against electrostatic discharges (ESD). They occur in a form of an inconspicuous “spark” generated while a circuit is touched or another element approaches it, which may result in operation interruptions or even partial or complete equipment failure. A similar effect may occur when connecting power supply or, for example, data transmission lines. MGT Brightek offers specialist solutions to such problems.
These are TVS (Transient Voltage Suppressor) diodes protecting single data transmission or power supply lines and TVS assemblies (arrays) enclosed in a single housing and ensuring comprehensive protection of a multitude of circuits, e.g. signal inputs. These components are installed in compact surface-mounted (SMD) packages, and create perfect solutions for mobile equipment in which miniaturisation is the overriding priority.
MGT Brightek TVS diode performance characteristics are designed with a view to ensuring optimum operation in digital systems with high-speed data transmission, so, basically, in the majority of today’s applications. They offer high-end protection for USB, SATA, Display Port connectors, and other similar interfaces. Compliance with the AEC-Q101 standard requirements is their another important advantage, thanks to which they can be mounted in automotive system circuits, where, over the last decade, communication with such mobile devices as smartphones has become a principal standard.
| Parameters | |
|---|---|
| Type of diode* | TVS or TVS array |
| Semiconductor structure* | bidirectional |
| Max. reverse voltage* | 3.3 V or 5 V |
| Breakdown voltage* | 5...8.5 V, 6 V or 6.5...16 V |
| Max. pulse current* | 4...12.5 A |
| Capacitance* | 0.18...15 pF |
| Leakage current | 1 µA |
| Package* | DFN2510-10 or DFN0603-2 |
| Mounting method | SMD |
| Kind of packaging | reel, tape |
| Properties | ESD protection |
* depending on the model
