One of the greatest advantages of unipolar transistors is their ability to handle high currents. This makes it possible to control relatively large loads using digital electronic components, such as microcontrollers. An example of a product that has been designed for such applications is the DIT050N06-DIO transistor manufactured by German brand Diotec Semiconductor, which we’d like to recommend today.
The DIT050N06-DIO model is an N-channel MOSFET. It is housed in a TO220AB package, i.e. it comes with an integrated heatsink to effectively dissipate the heat generated inside the component. This process can be further improved by combining the transistor with a larger, thermally conductive surface, as well as by using a heat sink and an active cooling module (equipped with a fan) . It will make the MOSFET suitable for handling high DC currents. The DIT050N06-DIO models are able to handle currents of up to 35 A at a junction temperature of 100°C (90 A at peak). Its thermal tolerance range extends from -55°C to 150°C. The maximum permissible drain-source voltage is up to 60 V, while the typical on-state channel resistance is 14 mΩ. The transistor also boasts a short switching time.
Another noteworthy characteristic of this component is that it's able to withstand an avalanche breakdown of up to 245 mJ, which will be particularly important when controlling inductive loads (motors).
The low threshold voltage (as low as 1.4 V) is an important feature of the component, too. This means that the DIT050N06-DIO transistor can be applied in most digital circuits. Furthermore, the very low gate capacitance translates into low energy loss and efficient operation of the component. Therefore, it can be controlled directly by a microcontroller (without the need to use a dedicated driver), among other things. Typical applications for Diotec Semiconductor include, e.g. battery-powered devices such as power tools, as well as DC/DC converters, chargers, brushless motor (BLDC) controllers, etc.
| Parameters | |
|---|---|
| Type of transistor: | N-MOSFET |
| Polarisation: | unipolar |
| Drain-source voltage: | 60 V |
| Drain current: | 35 A |
| Peak drain current: | 90 A |
| Dissipated power: | 85 W |
| Package: | TO220AB |
| Gate-source voltage: | ±20 V |
| On-state resistance: | 14 mΩ |
| Mounting: | THT |
| Gate charge: | 50nC |
| Packaging type: | tube |
| Kind of channel: | enhanced |
| Heat sink thickness: | max. 1.2 mm |
* depending on the model
