The Wayon company, founded by Shanghai Research Institute of Materials, offers MOSFET transistors made in the WMOS ™ C2 technology. This makes it possible to obtain very low conduction resistance (even 99mΩ) and to operate the transistor at low power. This solution is required wherever the energy efficiency of the device is essential.
The products are available in TO220, TO247, TO251, and TO262 packages designed for THT (through-hole mounting). The maximum drain-to-source voltage for these elements is 600V (±30V between gate and source); the drain current ranges from 5A to 38A (depending on the model).
The presented Wayon transistors can be used in power supplies and converters, LED control and similar applications.
| Features: | |
|---|---|
| Transistor type: | N-MOSFET |
| Technology: | WMOS™ C2 |
| Gate-source voltage: | ±30V |
| Drain to source voltage: | 600V |
| Drain current*: | 5…38A |
| Resistance*: | from 99mΩ to 1.15mΩ (on-state resistance) |
| Power dissipation*: | 27…277W |
| Package*: | TO220, TO247, TO251, TO262 |
| Mounting: | THT |
* depending on the model
Product overview
| Symbol | Package | Drain current [A] |
On-state resistance [mΩ] |
Power dissipation [W] |
|---|---|---|---|---|
| WMJ26N60C2-CYG | TO247-3 | 20 | 190 | 147 |
| WMJ38N60C2-CYG | TO247-3 | 38 | 99 | 277 |
| WMK07N60C2-CYG | TO220-3 | 5 | 1140 | 42 |
| WMK09N60C2-CYG | TO220-3 | 6 | 940 | 45 |
| WMK10N60C2-CYG | TO220-3 | 8 | 690 | 57 |
| WMK14N60C2-CYG | TO220-3 | 11 | 405 | 85 |
| WMK26N60C2-CYG | TO220-3 | 20 | 190 | 147 |
| WMK38N60C2-CYG | TO220-3 | 38 | 99 | 277 |
| WML10N60C2-CYG | TO220F | 8 | 690 | 27 |
| WML14N60C2-CYG | TO220F | 11 | 405 | 31 |
| WML20N60C2-CYG | TO220F | 15 | 300 | 31 |
| WML26N60C2-CYG | TO220F | 20 | 190 | 34 |
| WMN09N60C2-CYG | TO262 | 6 | 940 | 45 |
| WMN10N60C2-CYG | TO262 | 8 | 690 | 57 |
| WMN14N60C2-CYG | TO262 | 11 | 405 | 85 |
| WMP07N60C2-CYG | TO251 | 5 | 1140 | 42 |
| WMP14N60C2-CYG | TO251 | 11 | 405 | 85 |
